Gallium Nitride Processing for Electronics, Sensors and Spintronics
Bisher € 234,33
BeschreibungSemiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.
This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.
Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
InhaltsverzeichnisAdvanced Processing of GaN for Electronic Devices Dry Etching of GaN and Related Materials Design and Fabrication of GaN High Power Rectifiers Chemical, Gas, Biological and Pressure Sensing Nitride-Based Spintronics Novel Insulators for GaN MOSFETs and AlGaN/GaN MOS-HEMTs
PortraitStephen J Pearton and Cammy R. Abernathy are full professors in the Department of Materials Science and Engineering at the University of Florida, Gainesville. They are both leaders of research groups working in the processing and characterisation of semiconductor materials for high-speed device applications.
Fan Ren is a full professor in the university's Department of Chemical Engineering, specialising in research into devices based on GaN wide-bandgap semiconductor materials.
Untertitel: 'Engineering Materials and Processes'. Auflage 2006. 482 Abbildungen und Fotos, 10 Tabellen. Sprache: Englisch.
Verlag: Springer-Verlag GmbH
Erscheinungsdatum: Februar 2006