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Electrical and Thermal Characterization of Mesfets, Hemts and Hbts

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November 1994

Beschreibung

Beschreibung

Learn why III-V transistor device electrical characteristics change with temperature, and develop models of the temperature change for use in integrated circuit design programs. You'll find never-before presented experimental S-equivalent-circuit parameter data on a wide variety of devices, and learn how to measure S-parameters and fit equivalent circuits.


Inhaltsverzeichnis

Physical Modeling of III-V Semiconductor Devices. How to Measure Temperature-dependent Equivalent Circuits. Self-heating in Transistors. GaAs MESFET Equivalent Circuits (Room Temperature). Temperature-dependent MESFET Equivalent Circuits. HEMT Equivalent Circuits (Room Temperature). Temperature-dependent HEMT Equivalent Circuits. Gate Currents in MESFETs and HEMTs. Heterojunction Bipolar Transistors. Circuit Modeling.
EAN: 9780890067499
ISBN: 089006749X
Untertitel: Sprache: Englisch.
Verlag: ARTECH HOUSE INC
Erscheinungsdatum: November 1994
Seitenanzahl: 324 Seiten
Format: gebunden
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