Recombination in Semiconductors
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BeschreibungThis book is devoted to the main aspects of the physics of recombination in semiconductors. It is the first book to deal exclusively and comprehensively with the subject, and as such is a self-contained volume, introducing the concepts and mechanisms of recombination from a fundamental point of view. Professor Landsberg is an internationally acknowledged expert in this field, and while not neglecting the occasional historical insights, he takes the reader to the frontiers of current research. Following initial chapters on semiconductor statistics and recombination statistics, the text moves on to examine the main recombination mechanisms: Auger effects, impact ionisation, radiative recombination, defect and multiphonon recombination. The final chapter deals with the topical subject of quantum wells and low-dimensional structures. Altogether the book covers a remarkably wide area of semiconductor physics. The book will be of importance to physicists, electronic engineers and applied mathematicians who are studying or researching the physics and applications of semiconductors. Some parts of the book will be accessible to final-year undergraduates.
InhaltsverzeichnisList of main symbols; Note on units; Introduction; 1. Semiconductor statistics; 2. Recombination statistics; 3. Auger effects and impact ionization (mainly for bands); 4. Radiative recombination (mainly for bands); 5. Defects; 6. Multiphonon recombination T. Markvart; 7. Recombination in low-dimensional semiconductor structures R. I. Taylor; References; Name index; Index of topics, concepts and materials.
Untertitel: Sprache: Englisch.
Verlag: CAMBRIDGE UNIV PR
Erscheinungsdatum: August 2003
Seitenanzahl: 620 Seiten