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Doping in III-V Semiconductors

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Mai 2005

Beschreibung

Beschreibung

This is the first book to describe thoroughly the many facets of doping in compound semiconductors.

Inhaltsverzeichnis

1. Shallow impurities; 2. Phenomenology of deep levels; 3. Semiconductor statistics; 4. Growth technologies; 5. Doping with elemental sources; 6. Gaseous doping sources; 7. Impurity characteristics; 8. Redistribution of impurities; 9. Deep centers; 10. Doping in heterostructures, quantum wells, and superlattices; 11. Delta doping; 12. Characterization technique.

Pressestimmen

"Fred Schubert has written a book that very nicely fills two roles: It serves as a reference volume for those of us who use III-V materials, and it provides enlightening explanations of interesting and important problems in semi-conductor physics...His lucid explanations of some of the important physics of doped semiconductors is a major strength." David L. Miller, Physics Today
EAN: 9780521017848
ISBN: 052101784X
Untertitel: 'Cambridge Studies in Semicondu'. Sprache: Englisch.
Verlag: CAMBRIDGE UNIV PR
Erscheinungsdatum: Mai 2005
Seitenanzahl: 632 Seiten
Format: kartoniert
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